onsemi FDC606P
This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications.| Part No. | FDC606P |
|---|---|
| Datasheet | FDC606P Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● −6 A, −12 V ♦ RDS(on) = 26 mW @ VGS = −4.5 V ♦ RDS(on) = 35 mW @ VGS = −2.5 V ♦ RDS(on) = 53 mW @ VGS = −1.8 V● Fast Switching Speed
● High Performance Trench Technology for Extremely Low RDS(on)
● This is a Pb−Free and Halide Free Device
APPLICATIONS
● Battery Management● Load Switch
● Battery Protection
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current −Continuous (Note 1a.) −Pulsed −12 V ±8 V A −6 −20 PD Maximum Power Dissipation (Note 1a.) (Note 1b.) W 1.6 0.8 TJ, TSTG Operating and Storage Junction Temperature Range −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter RqJA Thermal Resistance, Junction−to−Ambient (Note 1a.) RqJC Th...
