onsemi FDC608PZ
This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc−dc conversions.| Part No. | FDC608PZ |
|---|---|
| Datasheet | FDC608PZ Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● –5.8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4.5 V RDS(ON) = 43 mW @ VGS = –2.5 V● Low Gate Charge
● High Performance Trench Technology for Extremely Low RDS(ON)
● SuperSOT TM –6 Package: Small Footprint (72% Smaller than Standard SO–8) Low Profile (1 mm Thick)
● These Devices are Pb−Free and Halide Free
ABSOLUTE MAXIMUM RATINGS
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDSS Drain−Gate Voltage –20 V VGSS Gate−Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –5.8 A – Pulsed –20 PD Maximum Power Dissipation (Note 1a) (Note 1b) 1.6 W 0.8 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Symbol Parameter RqJA Thermal Re...
