FEATURES
Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A Low gate charge (17nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick). RoHS Compliant GENERAL DESCRIPTION
Application DC - DC Conversion S D D Pin 1 G D D SuperSOTTM -6 D1 D2 G 33 6D 5D 4S MOSFET MAXIMUM RATINGS
TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings –30 ±25 –4.9 –20 1.6 0.8 –55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 78 (Note 1b) 156 °C/W Device Marking .610Z Device FDC610PZ Package SSOT6 Reel Size 7’’ Tape Width 8mm Quantity 3000units ©2007 Semiconductor Components Industries, LLC.
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