onsemi FDC6301N
This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors.| Part No. | FDC6301N |
|---|---|
| Datasheet | FDC6301N Download |
| Manufacturer |  onsemi |
| Description | Dual N-Channel Digital FET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. Since bias resistors are not required, these N−Channel FET’s can replace several digital transistors, with a variety of bias resistors.FEATURES
● 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V● Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V
● Gate−Source Zener for ESD Ruggedness. >6 kV Human Body Model
● This is a Pb−Free and Halide Free Device DATA SHEET D2 S1 D1 G2 G1S2 TSOT23 6−Lead SUPERSOTt−6 CASE 419BL MARKING DIAGRAM 301 MG G 1 301 = Specific Device Code M = Assembly Operation Month G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS, VCC Drain−Source Voltage, Power Supply Voltage 25 V VGSS,...
