GENERAL DESCRIPTION
These P-Channel enhancement mode field effect transistor are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. FEATURES
-25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .304 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 ABSOLUTE MAXIMUM RATINGS
TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous - Pulsed PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ,TSTG ESD Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJC Thermal Resistance, Junction-to-Case (Note 1) © 1997 September Components Industries, LLC.
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