onsemi FDC634P
This P−Channel 2.5 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications.| Part No. | FDC634P |
|---|---|
| Datasheet | FDC634P Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● −3.5 A, −20 V RDS(ON) = 80 mW @ VGS = −4.5 V RDS(ON) = 110 mW @ VGS = −2.5 V● Low Gate Charge (7.2 nC Typical)
● High Performance Trench Technology for Extremely Low RDS(ON)
APPLICATIONS
● Battery Management● Load Switch
● Battery Protection
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current − Continuous (Note 1a) −3.5 A − Pulsed −20 A PD Maximum Power (Note 1a) Dissipation (Note 1b) 1.6 W 0.8 W TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) RqJC Thermal Resistance, Junction−to−Case (Note 1) Ratings 78 Unit...
