onsemi FDC6401N
This Dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.| Part No. | FDC6401N |
|---|---|
| Datasheet | FDC6401N Download |
| Manufacturer |  onsemi |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V● Low Gate Charge (3.3 nC)
● High Performance Trench Technology for Extremely Low RDS(ON)
● High Power and Current Handling Capability
● This is a Pb−Free and Halide Free Device
APPLICATIONS
● DC/DC Converter● Battery Protection
● Power Management
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current −Continuous (Note 1a.) −Pulsed 20 V ±12 V A 3.0 12 PD Power Dissipation for Single Operation (Note 1a.) (Note 1b.) (Note 1c.) W 0.96 0.9 0.7 TJ, TSTG Operating and Storage Junction Temperature Range −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol...
