FEATURES
GENERAL DESCRIPTION
Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fast switching speed Low gate charge (11nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) Termination is Lead-free and RoHS Compliant APPLICATIONS
Load switch Battery protection Power management D D D D G S MOSFET MAXIMUM RATINGS
TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) ( Note 1a) (Note 1b) Ratings -20 ±8 -4.0 -20 1.6 0.8 -55 to + 150 Units V V A W °C RθJA Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 78 °C/W Device Marking .642 Device FDC642P Package SSOT-6TM Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2010 Semiconductor Components Industries, LLC.
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