onsemi FDC6506P
Dual P-Channel MOSFET
| Part No. | FDC6506P |
|---|---|
| Datasheet | FDC6506P Download |
| Manufacturer |  onsemi |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.● -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V
● Low gate charge (2.3nC typical). These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
APPLICATIONS
● Load switch● Battery protection
● Power management
● Fast switching speed.
● High performance trench technology for extremely low RDS(ON).
● SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). D2 S1 D1 4 3 5 G2 SuperSOT TM -6 S2 G1 6
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage...
