onsemi FDC658P
This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.| Part No. | FDC658P |
|---|---|
| Datasheet | FDC658P Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● −4 A, −30 V ♦ RDS(ON) = 0.050 W @ VGS = −10 V ♦ RDS(ON) = 0.075 W @ VGS = −4.5 V● Low Gate Charge (8 nC Typical)
● High Performance Trench Technology for Extremely Low RDS(ON)
● SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)
● This is a Pb−Free Device
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VDSS Drain−Source Voltage −30 V VGSS Gate−Source Voltage − Continuous ±20 V ID Drain Current − Continuous (Note 1a) −4 A − Pulsed −20 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Symbol Parameter Max Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) 78 °C/W RqJA Thermal Resistance, Junction−to−Case (Note 1) 30 °C/W 1.
