onsemi FDC8601
This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness.| Part No. | FDC8601 |
|---|---|
| Datasheet | FDC8601 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Shielded Gate MOSFET Technology● Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A
● Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A
● High Performance Trench Technology for Extremely Low RDS(on)
● High Power and Current Handling Capability in a Widely Used Surface Mount Package
● Fast Switching Speed
● 100% UIL Tested
● This Device is Pb−Free, Halide Free and is RoHS Compliant
APPLICATIONS
● Load Switch● Synchronous Rectifier
● Primary Switch
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current: Continuous (Note 1a) Pulsed 100 V ±20 V A 2.7 12 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ PD Power Dissipation: (Note 1a) (Note 1b) W 1.6 0.8 TJ, TSTG Operating and Storage Junction Temperature Range −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
