onsemi FDC86244
This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.| Part No. | FDC86244 |
|---|---|
| Datasheet | FDC86244 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Shielded Gate MOSFET Technology● Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A
● Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A
● High Performance Trench Technology for Extremely Low rDS(on)
● High Power and Current Handling Capability in a Widely Used Surface Mount Package
● Fast Switching Speed
● 100% UIL Tested
● This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
APPLICATIONS
● Load Switch● Synchronous Rectifier
● Primary Switch TSOT23 6−Lead CASE 419BL MARKING DIAGRAM &E&Y &.244&G 1 XXX = Specific Device Code &E = Space Designator &Y = Year of Production &. = Pin One Identifier G = Pb−Free Package PINOUT S4 D5 D6 3G 2D 1D SuperSOTTM−6 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 1 March, 2020 − Rev. 2 Publication Order Number: FDC86244/D FDC86244 MOSFET
MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to S...
