onsemi FDD6685
This P−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 2 5V).- Channels : 1
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
GENERAL DESCRIPTION
FEATURES
● −40 A, −30 V ♦ RDS(ON) = 20 mW @ VGS = –10 V ♦ RDS(ON) = 30 mW @ VGS = –4.5 V● Fast Switching Speed
● High Performance Trench Technology for Extremely Low RDS(ON)
● High Power and Current Handling Capability
● Qualified to AEC Q101
● This Device is Pb−Free and are RoHS Compliant S G D G D S DPAK3 (TO−252 3 LD) CASE 369AS MARKING DIAGRAM $Y&Z&3&K FDD 6685 $Y &Z &3 &K FDD6685 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 1 April, 2018 − Rev. 3 Publication Order Number: FDD6685/D FDD6685
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, Unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain−Source Voltage −30 V VGSS Gate−Source Voltage ±25 V ID Continuous Drain Current @TC = 25°C (Note 5) −40 A @TA = 25°C (Note 3a) −11 Pulsed, PW ≤ 100 ms (Note 3b) −100 PD Power...