onsemi FDMA1023PZ
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra−portable applications. It features two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses.| Part No. | FDMA1023PZ |
|---|---|
| Datasheet | FDMA1023PZ Download |
| Manufacturer |  onsemi |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
When connected in the typical common source configuration, bi−directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.FEATURES
● Max RDS(on) = 72 mW at VGS = −4.5 V, ID = −3.7 A● Max RDS(on) = 95 mW at VGS = −2.5 V, ID = −3.2 A
● Max RDS(on) = 130 mW at VGS = −1.8 V, ID = −2.0 A
● Max RDS(on) = 195 mW at VGS = −1.5 V, ID = −1.0 A
● Low Profile − 0.8 mm Maximum − In the New Package MicroFET 2x2 mm
● HBM ESD Protection Level > 2 kV (Note 3)
● Free from Halogenated Compounds and Antimony Oxides
● This Device is Pb−Free, Halide Free and is RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current −Continuous (Note 1a) −Pulsed −20 V ±8 V A −3.7 −6 PD Power Dissipation (Note 1a) (Note 1b) W 1.5 0.7 TJ, TSTG Operating and Storage Junction Temperature Range –55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
