onsemi FDMA1024NZ
This is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra−portable applications. It features two independent N−Channel MOSFETs with low on−state resistance for minimum conduction losses.| Part No. | FDMA1024NZ |
|---|---|
| Datasheet | FDMA1024NZ Download |
| Manufacturer |  onsemi |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The MicroFET t 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.FEATURES
● Max rDS(on) = 54 mW at VGS = 4.5 V, ID = 5.0 A● Max rDS(on) = 66 mW at VGS = 2.5 V, ID = 4.2 A
● Max rDS(on) = 82 mW at VGS = 1.8 V, ID = 2.3 A
● Max rDS(on) = 114 mW at VGS = 1.5 V, ID = 2.0 A
● HBM ESD Protection Level = 1.6 kV (Note 3)
● Low Profile − 0.8 mm Maximum in the New Package MicroFETt 2 x 2 mm
● Free from Halogenated Compounds and Antimony Oxides
● This Device is Pb−Free and is RoHS Compliant
APPLICATIONS
● Baseband Switch● Loadswitch
● DC−DC Buck Converters MOSFET
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed 20 V ±8 V 5.0 A 6.0 PD Power Dissipation (Note 1a) Power Dissipation (Note 1b) 1.4 W 0.7 TJ, TSTG Operating and Storage Junction Temperature Range −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
