onsemi FDMA910PZ
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance and zener diode protection against ESD.| Part No. | FDMA910PZ |
|---|---|
| Datasheet | FDMA910PZ Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The MicroFETt 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.FEATURES
● Max rDS(on) = 20 mW at VGS = −4.5 V, ID = −9.4 A● Max rDS(on) = 24 mW at VGS = −2.5 V, ID = −8.6 A
● Max rDS(on) = 34 mW at VGS = −1.8 V, ID = −7.2 A
● Low Profile − 0.8 mm Maximum in the New Package MicroFET 2x2 mm
● HBM ESD Protection Level > 2.8 kV Typical (Note 3)
● Free from Halogenated Compounds and Antimony Oxides
● This Device is Pb−Free, Halide Free and is RoHS Compliant MOSFET
MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID − Continuous TA = 25°C (Note 1a) − Pulsed −20 V ±8 V −9.4 A −45 PD Power Dissipation TA = 25°C (Note 1a) TA = 25°C (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range W 2.4 0.9 −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
