onsemi FDMC86102
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.| Part No. | FDMC86102 |
|---|---|
| Datasheet | FDMC86102 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Shielded Gate MOSFET Technology● Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A
● Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A
● Low Profile − 1 mm max in Power 33
● 100% UIL Tested
● This Device is Pb−Free, Halide Free and is RoHS Compliant
APPLICATIONS
● DC−DC ConversionMAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous TC = 25°C 100 V ±20 V A 20 − Continuous TA = 25°C (Note 1a) 7 − Pulsed (Note 4) 60 EAS Single Pulse Avalanche Energy (Note 3) 72 mJ PD Power Dissipation TC = 25°C 41 W Power Dissipation TA = 25°C (Note 1a) 2.3 TJ, Operating and Storage Junction TSTG Temperature Range −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol P...
