onsemi FDS2572
N-Channel MOSFET
DESCRIPTION
UltraFET Devices Combine Characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC−DC converters.FEATURES
● RDS(on) = 0.040 mW (Typ.), VGS = 10 V● Qg(TOT) = 29 nC (Typ.), VGS = 10 V
● Low QRR Body Diode
● Maximized Efficiency at High Frequencies
● UIS Rated
● These Device is Pb−Free and Halide Free Typical
APPLICATIONS
● DC−DC Converters● Telecom and Data−Com Distributed Power Architectures
● 48−volt I/P Half−Bridge/Full−Bridge
● 24−volt Forward and Push−Pull topologies DATA SHEET DD DD D DD Pin 1 SO−8 SS SS SS GG SOIC8 CASE 751EB 5 4 6 3 7 2 8 1 MARKING DIAGRAM &Z&2&K FDS2572 &Z = Assembly Plant Code &3 = Date Code (Year & Week) &K = Lot Traceability Code FDS2572 = Specific Device Code ORDERING INFORMATION Device FDS2572 Package SOIC8 (Pb−Free,Halide Free) Shipping† 2,500 / Tape & Reel †For information on tape and reel specifications,...