FDS3572 Datasheet PDF

FEATURES

● RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A
● Qg(tot) = 31 nC (Typ.), VGS = 10 V
● Low Miller Charge
● Low QRR Body Diode
● Optimized Efficiency at High Frequencies
● UIS Capability (Single Pulse and Repetitive Pulse)
● This Device is Pb−Free and Halide Free

APPLICATIONS

● Primary Switch for Isolated DC−DC Converters
● Distributed Power and Intermediate Bus Architectures
● High Voltage Synchronous Rectifier for DC Bus Converters

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted.) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current A Continuous (TA = 25°C, VGS = 10 V, RqJA = 50°C/W) (TA = 100°C, VGS = 10 V, RqJA = 50°C/W) Pulsed 8.9 5.6 Fig. 4 EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation Derate above 25°C 515 mJ 2.5 W 20 mW/°C TJ, TSTG Operating and Storage Temperature −55 to °C +150 Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.