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FDS3572 - N-Channel MOSFET

Key Features

  • rDS(ON) = 14mΩ (Typ. ), VGS = 10V, ID = 8.9A.
  • Qg(tot) = 31nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • Optimized efficiency at high frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS3572 November 2003 FDS3572 N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC (Typ.