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FDS3570 - N-Channel MOSFET

General Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • • • • • 9 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 8 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 80 ±20 (Note 1a) Units V V A W 9 50 2.5 1.2 1 -55 to +150 Pow.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS3570 May 1999 PRELIMINARY FDS3570 80V N-Channel PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • • • • 9 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.