Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
-
9 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D
D
D
5 6 7
4 3 2 1
SO-8
Symbol
VDSS VGSS ID PD
S
S
S
G
8
Absolute Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
80 ±20
(Note 1a)
Units
V V A W
9 50 2.5 1.2 1 -55 to +150
Pow.
FDS3570 Datasheet
