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MOSFET – N-Channel, POWERTRENCH)
80 V, 8.9 A, 16 mW
FDS3572
Features
• RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A • Qg(tot) = 31 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • Optimized Efficiency at High Frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free and Halide Free
Applications
• Primary Switch for Isolated DC−DC Converters • Distributed Power and Intermediate Bus Architectures • High Voltage Synchronous Rectifier for DC Bus Converters
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Ratings Unit
VDSS Drain to Source Voltage
80
V
VGS Gate to Source Voltage
±20
V
ID
Drain Current
A
Continuous
(TA = 25°C, VGS = 10 V, RqJA = 50°C/W) (TA = 100°C, VGS = 10 V, RqJA = 50°C/W) Pulsed
8.
FDS3572 Datasheet
