| Part Number | FDS3572 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MOSFET – N-Channel, POWERTRENCH)
80 V, 8.9 A, 16 mW
FDS3572
Features
• RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A • Qg(tot) = 31 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • O.
* RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A * Qg(tot) = 31 nC (Typ.), VGS = 10 V * Low Miller Charge * Low QRR Body Diode * Optimized Efficiency at High Frequencies * UIS Capability (Single Pulse and Repetitive Pulse) * This Device is Pb *Free and Halide Free Applications * Primary Switch for Iso. |
FDS3572 Datasheet and Specifications PDF
The FDS3572 is a N-Channel MOSFET.
| Part Number | FDS3572 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
FDS3572
November 2003
FDS3572
N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ
Features
• rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Bo.
* rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A * Qg(tot) = 31nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * Optimized efficiency at high frequencies * UIS Capability (Single Pulse and Repetitive Pulse) Applications * Primary switch for Isolated DC/DC converters * Distributed Power a. |