onsemi FDS3580
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.| Part No. | FDS3580 |
|---|---|
| Datasheet | FDS3580 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC−DC power supply designs with higher overall efficiency.FEATURES
● 7.6 A, 80 V: RDS(ON) = 0.029 W @ VGS = 10 V RDS(ON) = 0.033 W @ VGS = 6 V● Low Gate Charge (34 nC Typical)
● Fast Switching Speed
● High Performance Trench Technology for Extremely Low RDS(ON)
● High Power and Current Handling Capability
● Pb−Free and Halide Free
ABSOLUTE MAXIMUM RATINGS
(TA = 25C unless otherwise noted.) Symbol Parameter Ratings Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current Continuous (Note 1a) Pulsed 80 V 20 V A 7.6 50 PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 2.5 1.2 1 TJ, Tstg Operating and Storage Junction Temperature Range −55 to +150 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
