onsemi FDS4559
This complementary MOSFET device is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.| Part No. | FDS4559 |
|---|---|
| Datasheet | FDS4559 Download |
| Manufacturer |  onsemi |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Q1: N−Channel ♦ 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10 V RDS(on) = 75 mΩ @ VGS = 4.5 V● Q2: P−Channel ♦ −3.5 A, −60 V RDS(on) = 105 mΩ @ VGS = –10 V RDS(on) = 135 mΩ @ VGS = –4.5 V
APPLICATIONS
● DC/DC converter● Power management
● LCD backlight inverter
● This is a Pb−Free and Halide Free Device
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Q1 Q2 Unit VDSS Drain−Source Voltage 60 −60 V VGSS Gate−Source Voltage ±20 ±20 V ID Drain Current Continuous (Note 1a) 4.5 −3.5 A Pulsed 20 −20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.2 (Note 1c) 1 TJ, Operating and Storage Junction TSTG Temperature Range −55 to +175 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parame...
