onsemi FDS4685
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).| Part No. | FDS4685 |
|---|---|
| Datasheet | FDS4685 Download |
| Manufacturer |  onsemi |
| Description | 40V P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON) = 0.035 Ω @ VGS = –4.5 V● Fast switching speed
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability
APPLICATIONS
● Power management● Load switch
● Battery protection
GENERAL DESCRIPTION
D D D D SO-8 Pin 1 G S S S 5 4 6 3 7 2 8 1ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Ratings –40 ±20 –8.2 –50 2.5 1.4 1.2 –55 to +150 50 125 25 Package Marking and Ordering Information Device Marking FDS4685 Device FDS4685 Reel Size 13” Tape width 12mm Units V V A W °C °C/W Quantity 2500 units ©2005 Semiconductor Components Industries, LLC.
