onsemi FDS4935A
This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V).| Part No. | FDS4935A |
|---|---|
| Datasheet | FDS4935A Download |
| Manufacturer |  onsemi |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process.FEATURES
● −7 A, −30 V. RDS(ON) = 23 mW @ VGS = −10 V RDS(ON) = 35 mW @ VGS = −4.5 V● Low Gate Charge (15 nC Typical)
● Fast Switching Speed
● High Performance Trench Technology for Extremely Low RDS(ON)
● High Power and Current Handling Capability
● This is a Pb−Free Device
FEATURES
● Power Management● Load Switch
● Battery Protection
ABSOLUTE MAXIMUM RATINGS
(TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current − Continuous (Note 1a) − Pulsed −30 V 20 V −7 A −30 PD Power Dissipation for Dual Operation 2 W PD Power Dissipation (Note 1a) for Single Operation(Note 1b) (Note 1c) 1.6 W 1 0.9 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
