Datasheet Summary
March 2002
Dual 30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V
- 20V).
Features
- - 7 A,
- 30 V RDS(ON) = 23 mΩ @ VGS =
- 10 V RDS(ON) = 35 mΩ @ VGS =
- 4.5 V
- Low gate charge (15nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- Power management
- Load switch
- Battery protection
D2 D
D2 D
DD1 D1 D
5 6 7
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
G2...
