FDS4935A Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 20V).
FDS4935A Key Features
- 7 A, -30 V RDS(ON) = 23 mΩ @ VGS = -10 V RDS(ON) = 35 mΩ @ VGS = -4.5 V
- Low gate charge (15nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability