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FDS4935A - Dual 30V P-Channel MOSFET

Datasheet Summary

Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

20V).

Features

  • 7 A,.
  • 30 V RDS(ON) = 23 mΩ @ VGS =.
  • 10 V RDS(ON) = 35 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge (15nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Datasheet preview – FDS4935A

Datasheet Details

Part number FDS4935A
Manufacturer Fairchild Semiconductor
File Size 113.22 KB
Description Dual 30V P-Channel MOSFET
Datasheet download datasheet FDS4935A Datasheet
Additional preview pages of the FDS4935A datasheet.

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Full PDF Text Transcription

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FDS4935A March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). Features • –7 A, –30 V RDS(ON) = 23 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.
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