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FDS4935 - Dual 30V P-Channel PowerTrench MOSFET

Datasheet Summary

Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

25V).

Power management Load switch

Features

  • 7 A,.
  • 30 V RDS(ON) = 23 mΩ @ VGS =.
  • 10 V RDS(ON) = 35 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge (15nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD1DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 6 Q1 7 Q2 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Ga.

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Datasheet Details

Part number FDS4935
Manufacturer Fairchild Semiconductor
File Size 118.70 KB
Description Dual 30V P-Channel PowerTrench MOSFET
Datasheet download datasheet FDS4935 Datasheet
Additional preview pages of the FDS4935 datasheet.

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Full PDF Text Transcription

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FDS4935 June 2001 FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • –7 A, –30 V RDS(ON) = 23 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.
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