onsemi FDS5680
This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.| Part No. | FDS5680 |
|---|---|
| Datasheet | FDS5680 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● S A, −60 V. RDS(ON) = 0.020 mW @ VGS = 10 V RDS(ON) = 0.025 mW @ VGS = 6 V● Low Gate Charge (30 nC typical)
● Fast Switching Speed
● High Performance Trench Technology for Extremely Low RDS(ON)
● High Power and Current Handling Capability
● These Device is Pb−Free and Halide Free
APPLICATIONS
● dc−dc Converter● Load Switch
● Motor Drives
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS Drain−Source Voltage 60 V VGSS Gate−Source Voltage ±20 V ID Drain Current − Continuous − Pulsed (Note 1a) 8 A 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range −55 to +150 _C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS TA = 25°C unless otherwise...
