FDS5680 Overview
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Key Features
- 8 A, 60 V
- RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 6 V
- Low gate charge (30nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
