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FDS5680 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • • • • • • 8 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 6 V. Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.

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Datasheet Details

Part number FDS5680
Manufacturer Fairchild Semiconductor
File Size 261.76 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS5680 Datasheet
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Full PDF Text Transcription

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FDS5680 July 1999 FDS5680 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • • • • • 8 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 6 V. Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
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