FDS5680 Datasheet | Fairchild Semiconductor

July 1999 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • • • • • 8 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 6 V. Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications...