| Part Number | FDS5680 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi’s advanced
PowerTrench process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These d.
* S A, *60 V. RDS(ON) = 0.020 mW @ VGS = 10 V RDS(ON) = 0.025 mW @ VGS = 6 V * Low Gate Charge (30 nC typical) * Fast Switching Speed * High Performance Trench Technology for Extremely Low RDS(ON) * High Power and Current Handling Capability * These Device is Pb *Free and Halide Free Applicat. |