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FDS5682 - N-Channel Power Trench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

High power and current handling c

Features

  • rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A.
  • rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge General.

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Datasheet Details

Part number FDS5682
Manufacturer Fairchild Semiconductor
File Size 410.81 KB
Description N-Channel Power Trench MOSFET
Datasheet download datasheet FDS5682 Datasheet
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Full PDF Text Transcription

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FDS5682 N-Channel PowerTrench® MOSFET May 2008 FDS5682 N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mΩ Features „ rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A „ rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. „ High power and current handling capability Applications „ DC/DC converters Branding Dash 1 2 3 4 SO-8 5 54 63 72 81 ©2008 Fairchild Semiconductor Corporation FDS5682 Rev. A1 1 www.fairchildsemi.
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