FDS5682 Overview
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Key Features
- rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A
- rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
