Datasheet4U Logo Datasheet4U.com

FDS5682 - N-Channel Power Trench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

High power and current handling c

Key Features

  • rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A.
  • rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS5680 N-Channel MOSFET ON Semiconductor
FDS5670 N-Channel MOSFET ON Semiconductor
FDS5690 60V N-Channel Power MOSFET ON Semiconductor
FDS010 Photodiodes Thorlabs
FDS100BA60 DIODE MODULE SanRex Corporation

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDS5680 N-Channel MOSFET
FDS5670 N-Channel MOSFET
FDS5672 N-Channel MOSFET
FDS5690 N-Channel MOSFET
FDS5692Z N-Channel UltraFET Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS5682 N-Channel PowerTrench® MOSFET May 2008 FDS5682 N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mΩ Features „ rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A „ rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. „ High power and current handling capability Applications „ DC/DC converters Branding Dash 1 2 3 4 SO-8 5 54 63 72 81 ©2008 Fairchild Semiconductor Corporation FDS5682 Rev. A1 1 www.fairchildsemi.