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FDS5680 - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on

state resistance and yet maintain superior switching performance.

Key Features

  • S A,.
  • 60 V. RDS(ON) = 0.020 mW @ VGS = 10 V RDS(ON) = 0.025 mW @ VGS = 6 V.
  • Low Gate Charge (30 nC typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • These Device is Pb.
  • Free and Halide Free.

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Datasheet Details

Part number FDS5680
Manufacturer onsemi
File Size 233.11 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS5680 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 60 V FDS5680 General Description This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required. Features • S A, −60 V. RDS(ON) = 0.020 mW @ VGS = 10 V RDS(ON) = 0.