FDS5680 Description
This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
FDS5680 Key Features
- S A, -60 V
- Low Gate Charge (30 nC typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- These Device is Pb-Free and Halide Free