onsemi FDS5690
This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process ON that • 7 A, 60 V. These devices are well suited for low voltage and battery • Fast switching speed.| Part No. | FDS5690 |
|---|---|
| Datasheet | FDS5690 Download |
| Manufacturer |  onsemi |
| Description | 60V N-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
RDS(on) = 0.028 Ω @ VGS = 10 V has been especially tailored to minimize on-state RDS(on) = 0.033 Ω @ VGS = 6 V. resistance and yet maintain superior switching performance.● Low gate charge (23nC typical). powered applications where fast switching are required. low in-line power loss and
● High performance trench technology for extremely low RDS(ON).
APPLICATIONS
● High power and current handling capability.● DC/DC converter
● Motor drives D D D D 5 4 6 3 SO-8 G SS S 7 2 8 1
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range Ratings 60 ±20 7 50 2.5 1.2 1 -55 to +150 Units V V A W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (N...
