onsemi FDS6570A
This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.| Part No. | FDS6570A |
|---|---|
| Datasheet | FDS6570A Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V.● Low gate charge (47nC typical).
APPLICATIONS
● DC/DC converter● Load switch
● Battery protection
● Fast switching speed.
● High performance trench technology for extremely low RDS(ON).
● High power and current handling capability. D D D D 5 4 6 3 G SS SO-8 S 7 2 8 1
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range FDS6570A 20 ±8 15 50 2.5 1.2 1 -55 to +150 Units V V A W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W °C/W Package Outlines and Ordering Information Device Marking Device Reel Size FDS6570A FDS6570A 13’’ Tape Width 12mm Quantity 2500 units 2000 Semiconductor Components Industries, LLC.
