FDS6570A Datasheet | Fairchild Semiconductor

March 2000 Single N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V. - - - - Low gate charge (47nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power...