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FDS6575 Datasheet P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS6575 September 2001 FDS6575 P-Channel 2.5V Specified PowerTrench® MOSFET.

General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

It has been optimized for power management applications wtih a wide range of gate drive voltage (2.5V – 8V).

Applications • Power management • Load switch • Battery protection

Key Features

  • 10 A,.
  • 20 V. RDS(ON) = 13 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 17 mΩ @ VGS =.
  • 2.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • High current and power handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note.

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