| Part Number | FDS6575 Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
FDS6575-VB
FDS6575-VB Datasheet
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.015 at VGS = - 4.5 V
- 20
0.021 at VGS = - 2.5 V
0.040 at VGS = - 1.8 V
ID (A.
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Portable Devices - Load Switch - Battery Switch - Charger Switch ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drai. |
FDS6575 Datasheet and Specifications PDF
The FDS6575 is a P-Channel 20V MOSFET.
| Part Number | FDS6575 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wtih a wide range of ga.
* *10 A, *20 V. RDS(ON) = 13 mΩ @ VGS = *4.5 V RDS(ON) = 17 mΩ @ VGS = *2.5 V * Low gate charge * High performance trench technology for extremely low RDS(ON) * High current and power handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise not. |