Fairchild Semiconductor FDS6576
This P-Channel 2.5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).| Part No. | FDS6576 |
|---|---|
| Datasheet | FDS6576 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
APPLICATIONS
● Load switch● Battery protection
● Power management –11 A, –20 V. RDS(ON) = 0.014 : @ VGS = –4.5 V RDS(ON) = 0.020 : @ VGS = –2.5 V r
● Extended VGSS range ( 12V) for battery applications.
● Low gate charge (43nC typical).
● Fast switching speed.
● High performance trench technology for extremely low RDS(ON).
● High power and current handling capability.
● RoHS Compliant. D D D D G SO-8 SS S
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) RTJC Thermal Resistance, Junction-to-Case (Note 1) Package Marking and Ordering Information Device Marking FDS6576 Device FD...
