FDS6576
Description
Features
This P-Channel 2.5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced Power Trench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
- 12V).
Applications
- Load switch
- Battery protection
- Power management
- 11 A,
- 20 V. RDS(ON) = 0.014 : @ VGS =
- 4.5 V RDS(ON) = 0.020 : @ VGS =
- 2.5 V r
- Extended VGSS range ( 12V) for battery applications.
- Low gate charge (43n C typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability.
- Ro HS pliant.
SO-8
SS S
Absolute Maximum Ratings
TA=25o C unless otherwise noted
Symbol
VDSS VGSS ID
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature...
