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FDS6576 - P-Channel MOSFET

Key Features

  • This P-Channel 2.5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET December 2006 tm FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Applications • Load switch • Battery protection • Power management  –11 A, –20 V. RDS(ON) = 0.014 : @ VGS = –4.5 V  RDS(ON) = 0.020 : @ VGS = –2.5 V r • Extended VGSS range ( 12V) for battery applications. • Low gate charge (43nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability. • RoHS Compliant.