onsemi FDS6673BZ
This P−Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.| Part No. | FDS6673BZ |
|---|---|
| Datasheet | FDS6673BZ Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A● Max RDS(on) = 12 mW @ VGS = −4.5 V, ID = −12 A
● Extended VGS Range (−25 V) for Battery
APPLICATIONS
● HBM ESD Protection Level of 6.5 kV Typical (Note 3)● High Performance Trench Technology for Extremely Low RDS(on)
● High Power and Current Handling Capability
● Pb−Free, Halide Free and RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed −30 V ±25 V A −14.5 −75 PD Maximum Power dissipation (Note 1a) (Note 1b) (Note 1c) W 2.5 1.2 1.0 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Para...
