GENERAL DESCRIPTION
FEATURES
-11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. Low gate charge (30nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D FD66S75 5 4 6 3 G 7 2 S SO-8 pin 1 S S 8 1 ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous - Pulsed TA = 25oC unless otherwise noted (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJC Thermal Resistance, Junction-to-Case (Note 1) © 1998 Semiconductor Components Industries, LLC. October-2017, Rev. 3 FDS6675 -30 ±20 -11 -50 2.5 1.2 1 -55 to 150 50 25 Units V V A W °C °C/W °C/W Publication Order Number: FDS6675/D ELECTRICAL CHARACTERISTICS
(TA = 25 OC...
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