onsemi FDS6676AS
The FDS6676AS is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.| Part No. | FDS6676AS |
|---|---|
| Datasheet | FDS6676AS Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 14.5 A, 30 V ♦ RDS(ON) Max = 6.0 mW at VGS = 10 V ♦ RDS(ON) Max = 7.25 mW at VGS = 4.5 V● Includes SyncFET Schottky Body Diode
● Low Gate Charge (45 nC Typical)
● High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching
● High Power and Current Handling Capability
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● DC/DC Converter● Low Side Notebook DATA SHEET VDSS MAX 30 V RDS(on) MAX 6.0 mW @ 10 V 7.25 mW @ 4.5 V ID MAX 14.5 A DD DD S S SG SOIC8 (SO−8) CASE 751EB MARKING DIAGRAM FDS6676AS ALYW FDS6676AS A L YW = Device Code = Assembly Site = Wafer Lot Number = Assembly Start Week PIN CONNECTIONS 5 4 6 3 7 2 8 1 ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2008 1 February, 2022 − Rev. 3 Publication Order Number: FDS6676AS/D FDS6676AS, FDS6676AS−G
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Paramete...
