GENERAL DESCRIPTION
FEATURES
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant D D D D 5 4 6 3 G 7 2 SO-8 SS S 8 1 MOSFET MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) PD (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Temperature Ratings -30 ±25 -13 -65 2.5 1.2 1.0 -55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 °C/W 25 °C/W Package Marking and Ordering Information Device Marking FDS6679AZ Device FDS6679AZ Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2009 Semiconductor Components Industries, LLC.
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