onsemi FDS6680A
This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.| Part No. | FDS6680A |
|---|---|
| Datasheet | FDS6680A Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V● Ultra-low gate charge
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Case RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6680A FDS6680A 13’’ Ratings 30 ±20 12.5 50 2.5 1.2 1.0 –55 to +150 50 25 Tape width 12mm Units V A W °C °C/W Quantity 2500 units ©2012 Semiconductor Components Industries, LLC. October-2017, Rev. 6 Publ...
