onsemi FDS6875
Dual P-Channel MOSFET
| Part No. | FDS6875 |
|---|---|
| Datasheet | FDS6875 Download |
| Manufacturer |  onsemi |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
These P-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. -6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 D2 D2 D1 D1 FD68S75 SO-8 G2 S2 pin 1 G1 S1 SO-8 SOT-223 5 6 7 8 SOIC-16 4 3 2 1ABSOLUTE MAXIMUM RATINGS
Symbol Parameter TA = 25oC unless otherwise noted VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous - Pulsed (Note 1a) PD Power Dissipation for Dual Operation Power Dissipation for Single Op...
