onsemi FDS6900AS
The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. The high−side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses.| Part No. | FDS6900AS |
|---|---|
| Datasheet | FDS6900AS Download |
| Manufacturer |  onsemi |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. Q2 also includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.FEATURES
● Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V ♦ RDS(on) = 22 mW at VGS = 10 V ♦ RDS(on) = 28 mW at VGS = 4.5 V● Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V ♦ RDS(on) = 27 mW at VGS = 10 V ♦ RDS(on) = 34 mW at VGS = 4.5 V
● 100% RG (Gate Resistance) Tested
● These Devices are Pb−Free and are RoHS Compliant Specifications
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Q2 Q1 Units VDSS VGSS Drain−Source Voltage Gate−Source Voltage 30 30 V ±20 ±20 V ID Drain Current − Continuous (Note 1a) − Pulsed A 8.2 6.9 30 20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Not...
