onsemi FDS6910
Dual N-Channel MOSFET
| Part No. | FDS6910 |
|---|---|
| Datasheet | FDS6910 Download |
| Manufacturer |  onsemi |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.FEATURES
● 7.5 A, 30 V. RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V● Fast switching speed
● Low gate charge
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 6 Q1 7 Q2 8 4 3 2 1
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Charact...
