onsemi FDT86246
This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® Process that has been optimized for RDS(on), switching performance and ruggedness.| Part No. | FDT86246 |
|---|---|
| Datasheet | FDT86246 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A● Max RDS(on) = 329 mW at VGS = 6 V, ID = 1.7 A
● High Performance Trench Technology for Extremely Low RDS(on)
● High Power and Current Handling Capability in a Widely Used Surface Mount Package
● Fast Switching Speed
● 100% UIL Tested
● These Devices are Pb−Free and are RoHS Compliant Typical
APPLICATIONS
● Load Switch● Primary Switch MOSFET
MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current −Continuous (Note 1a) 150 V ±20 V 2 A −Pulsed 8 EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation (Note 1a) 8 mJ 2.2 W Power Dissipation (Note 1b) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
