onsemi FGD3050G2
N-Channel IGBT
| Part No. | FGD3050G2 |
|---|---|
| Datasheet | FGD3050G2 Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 300 mJ at TJ = 25°C● Logic Level Gate Drive
● AEC−Q101 Qualified and PPAP Capable
● This Device is Pb−Free, Halid Free and is RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● Coil on Plug Application
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 500 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 20 V ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 kW 300 mJ TC = 25°C ESCIS150 ISCIS = 11.0 A, L = 3.0 mHy, RGE = 1 kW 180 mJ TC = 150°C IC25 IC110 VGEM PD TJ TSTG TL Collector Current Continuous at VGE = 5.0 V, TC = 25°C Collector Current Continuous at VGE = 5.0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction Temperature Range Storage Junction Temperature Range Max. Lead Temperature for Soldering (Leads at 1.6 mm from case for 10 s) 32 A 27 A ±10 V 150 W 1.1 W/°C −40 to +175 °C −40 to +175 °C 300 °C TPKG Max.
